6
RF Device Data
Freescale Semiconductor
MRFE6S9200HR3 MRFE6S9200HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
?70
?10
1 10010
?40
?50
?30
?20
?60
7th Order
VDD
= 28 Vdc, I
DQ
= 1400 mA
f1 = 875 MHz, f2 = 885 MHz
Two?Tone Measurements
5th Order
3rd Order
600
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO?TONE SPACING (MHz)
1 10010
?70
IM3?U
?20
?40
IMD, INTERMODULATION DISTORTION (dBc)
?50
?30
IM3?L
IM5?U
IM5?L
IM7?L
IM7?U
?10
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
?1
?3
?5
60
Actual
Ideal
0
?2
?4
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON THE CCDF (dB)
50
70 80
120
30
60
55
50
45
40
35
η
D
,
DRAIN EFFICIENCY (%)
VDD
= 28 Vdc, I
DQ
= 1400 mA
f = 880 MHz, Input PAR = 7.5 dB
?1 dB = 59.7 W
90 110100
?2 dB = 82.5 W
?3 dB = 115 W
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
49
?70
?30
38 4039
?40
?50
?60
ACPR, UPPER AND LOWER RESULTS (dBc)
41 42 43 44 45
Uncorrected, Upper and Lower
DPD Corrected
No Memory Correction
DPD Corrected, with
Memory Correction
VDD
= 28 Vdc, I
DQ
= 1400 mA, f = 880 MHz
Single?Carrier W?CDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
46 47
600
16
24
0
80
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc
IDQ
= 1400 mA
f = 880 MHz
TC
= ?30
C
25C
60
85C
10
0.1
23
22
21
20
19
50
40
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
100
?30C
25C
85C
18
17
1
70
?60
VDD
= 28 Vdc, P
out
= 240 W (PEP), I
DQ
= 1400 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
48
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